Abstract
The interface quality of a low temperature atomic-layer-deposited (ALD) HfO2/Al2O3 bilayer high-κ gate dielectric on a GaAs0.35Sb0.65 channel for heterojunction p-channel tunneling FETs is investigated. Lowering the ALD temperature from 250 to 110 °C results in improved capacitance–voltage characteristics and lower interface trap density in metal–oxide–semiconductor capacitor structures. Using the low-temperature ALD high-κ dielectric, a GaAs0.35Sb0.65/In0.7Ga0.3As heterojunction p-channel tunneling FET is demonstrated with an improved switching slope and higher on–off current ratio. X-ray photoelectron spectroscopy is performed to investigate the effect of the deposition temperature on the chemical composition of the high-κ/GaAs0.35Sb0.65 interface.
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