Abstract
The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p-type (111) oriented silicon wafers using a −30 kV acceleration potential and an oxygen plasma at a pressure of 0.2 mTorr. The effects of ion dose and high-voltage pulse width were examined. Some of the implanted wafers were annealed. Both the as-implanted and annealed wafers were examined using secondary-ion-mass spectroscopy and Auger electron spectroscopy. The initial results show that oxygen can be implanted by PSII and suggest that a buried layer of silicon dioxide has been formed in the implanted wafers.
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