Low voltage GaAs on Si reflection modulators with 51% reflection change

Abstract

A GaAs/GaAlAs multiquantum well reflection modulator grown on an Si substrate which shows a 51% reflection change, and a 9.3dB contrast ratio, for only 8V bias is reported. The device uses an asymmetric Fabry–Perot cavity to enhance the electroabsorptive modulation and was grown by MOVPE. The devices have low dark currents (3nA at 10V reverse bias) and high optical quality. These results have important implications for applications such as optical interconnects and integration of optoelectronic devices with Si electronics.