Abstract
We investigate a new structure of high-power 660-nm AlGaInP laserdiodes. In the structure, a p-GaAs layer is grown on the ridgewaveguide serving as the current-blocking layer, and nonabsorbingwindows are only fabricated near the cavity facets to increase thecatastrophic-optical-damage level. Stable fundamental mode operationwas achieved at up to 80 mW without kinks, and the maximum output powerwas 184 mW at 22 degrees C. The threshold current was 40 mA.
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