Low-temperature synthesis of large-area CNx nanotube arrays.

Abstract

Well-aligned nitrogen-doped multiwall carbon nanotube arrays have been successfully grown over large areas on quartz and silicon wafers by floating-catalyst chemical vapor deposition at low temperatures (600 degrees C). These nitrogen-including nanotubes, derived from pyridine-ferrocene mixtures, have smaller outer diameters but larger inner diameters compared with carbon nanotubes grown from a xylene-ferrocene mixture under similar conditions. The N-doped nanotubes exhibit bamboo-like structures in the core. Elemental analysis and electron energy loss spectroscopy analysis show that the as-prepared nanotubes contain as much as 2.62 wt.% N, with most of the N concentrated in the inner few shells of the nanotube. Such large-scale arrays of well-aligned N-doped nanotubes on silicon wafers have a current density as high as 23.8 mA/cm2 at an applied electric field of 17 V/micron, which can be further improved by patterning the tubes and coating the silicon substrate with a conductive thin metal film for the fabrication of flat panel displays.