Abstract
Epitaxial silicon thick films have been deposited at around 400 °C by mesoplasma chemical vapor deposition with trichlorosilane (TCS) as source gas. The deposition rate of the Si films increases linearly with the TCS flow rate and reaches 30 nm/s at 15 sccm of TCS. These films have exhibited relatively high hall mobility (~ 200 cm 2/V-s) independently of the deposition rate.
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