Abstract
We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. Ions implanted into the desired growth area of WOx thin films lead to a local increase in the compressive stress, leading to the growth of nanowire at lower temperatures (600 °C vs. 750–900 °C) than for equivalent non-implanted samples. Nanowires were successfully grown on the microscale patterns using wafer-level ion implantation and on the nanometer scale patterns using a focused ion beam (FIB). Experimental results show that nanowire growth is influenced by a number of factors including the dose of the implanted ions and their atomic radius. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature.
Highlights
We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction
The patterned growth of WOx nanowires has been demonstrated by Nakao and colleagues[21,22,23]; the WOx nanowires synthesized by annealing W/Cr thin films on Si substrates in a vacuum furnace with flowing oxygen gas are arranged into patterns using a micro heater or lift-off techniques
Between 750 °C and 900 °C, the length of the nanowires is proportional to the growth temperature which in turn is directly related to the compressive stress
Summary
We report a unique approach for the patterned growth of single-crystalline tungsten oxide (WOx) nanowires based on localized stress-induction. The implanted-ion-assisted, stress-induced method proposed here for the patterned growth of WOx nanowires is simpler than alternative approaches and enhances the compatibility of the process by reducing the growth temperature. By implanting ions into WOx thin films deposited on Si substrates, we have successfully synthesized WOx nanowires at 600 °C, 150 °C lower than for non-implanted films This approach is based on stress-induced growth, whereby the compressive stress applied to thin films is relieved by the growth of nanowires. A single nanowire was successfully grown by reducing the ion-implanted area down to 50 × 50 nm[2], and wafer-scale growth of patterned nanowires is possible This is the first time the growth of WOx nanowires has been controlled on the nanoscale using localized compressive stress. This report explains the mechanisms governing the growth of WOx nanowires induced by the difference between the TECs of the thin film and the substrate
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