Abstract
The presence of electrically active defects in electron irradiated P-doped n-type silicon was monitored using capacitance and loss factor measurements. Irradiations were performed at temperatures ⪅12 K with electrons of energies ⪅1.50MeV. Seemingly, the concentration of single vacancies on the irradiated samples is low. This is deduced from the small recovery in the samples properties observed upon annealing at ∼75 K. Also two annealing stages observed at ∼140–150 K and ∼240 K are attributed to the self-interstitial. Electron traps observed at ∼( E c − 0.14) eV and ( E − 0.24) eV in the ga p are ascribed to the carbon interstitial and to the divacancy, respectively.
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