Low Temperature Processing of Nanocrystalline Lead Zirconate Titanate (PZT) Thick Films and Ceramics by a Modified Sol-Gel Route

Abstract

Dispersing fine particles into a sol-gel matrix is a promising process to get a thick 0–3 composite coating layer. In this paper, we have further improved this modified sol-gel process by nanocrystalline composite technique to realize the low temperature annealing. Dense Pb(Zr, Ti)O3 (PZT) thick films of 10 to 50 µm in thickness have been obtained on the platinum-coated silicon substrates by spin-coating at sintering temperature of 600–700°C and fully developed submicron-sized grains have been demonstrated in screen-printing piezoelectric films on alumina substrates at sintering temperature of 700–800°C. The dependence of various properties such as microstructure, crystallization, ferroelectric and dielectric properties of such made thick films on the processing parameters have been investigated. For a 10 µm-thick film spin-coated on silicon wafer, the dielectric loss and relative permittivity are 0.010 and 1024, respectively, at 1 kHz. The remanent polarization (Pr) and the coercive field (Ec) are 13.6 µC/cm2 and 34.5 kV/cm, respectively. Obviously, such made thick film has comparable properties with bulk PZT ceramic. This novel technique can be extensively used in sol-gel, screen-printing, tape-casting, even in traditional ceramic process to reduce the process temperature.