Low temperature polycrystalline silicon thin film transistors

Abstract

Low temperature polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated using laser crystallized poly-Si, as-deposited poly-Si by plasma process, and metal-induced crystallized (MIC) poly-Si were reviewed on the basis of recent results. The as-deposited and laser crystallized poly-Si TFTs have been fabricated in the present work together with Ni-MIC poly-Si using plasma enhanced chemical vapor deposition (PECVD) silicon nitride as a gate insulator. The as-deposited poly-Si TFT fabricated with a maximum process temperature of 280°C exhibits a field effect mobility of 12 cm 2/V s when the thickness of the poly-Si is ∼300 nm. The laser crystallized poly-Si TFT using Ni silicide source/drain and gate electrodes exhibits a field effect mobility of 262 cm 2/V s. However, the MIC poly-Si TFT using PECVD SiN x gate insulator exhibits a field effect mobility of ∼12 cm 2/V s.