Abstract
Aluminum oxide films were grown by reactive magnetron sputtering. In order to maintain a stable deposition process and high deposition rate, a pulsed direct current bias was applied to the aluminum target and the substrate. An external solenoid was used to form a magnetic trap between the target and the substrate. The influence of substrate temperature, substrate bias, and the magnetic trap on film growth and properties was studied by different surface and thin-film analysis techniques and electrical measurements. Normally, amorphous alumina films were produced. However, under optimum process conditions, crystalline alumina films can be obtained at temperatures as low as 250 °C, with a hardness ∼20 GPa and excellent electrical insulating properties.
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