Abstract
A growth procedure was proposed to prepare the saturated growth solution at low temperature. Using the procedure, an (In,Ga,Al)Sb alloy was grown on GaSb at 450 °C successfully. The energy gap and the lattice constant of the grown layer were determined at 0.886 eV at 77 K and 6.1174 Å, respectively. The estimated value of the alloy composition from these values was In0.048Ga0.812Al0.140Sb.
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