Abstract
The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.
Highlights
Nowadays III–V semiconductor nanowires (NWs) attract increasing attention due to recent advances made in their use as building elements for various electronic, optical, and biological applications [1,2,3,4]
Au is known to be a detrimental impurity in Si, limiting the integration of those nano-objects with a Si platform [10]
Au as a catalyst can lead to uncontrolled doping of III–V NWs [11,12]
Summary
Nowadays III–V semiconductor nanowires (NWs) attract increasing attention due to recent advances made in their use as building elements for various electronic, optical, and biological applications [1,2,3,4]. In order to further improve the homogeneity and controllability of GaAs NWs density and diameters, Tauchnitz et al [20] developed a three-step in-situ surface modification procedure for non-patterned native-SiOx /Si(111) substrates which decouples the Ga-induced hole formation in SiOx from the following Ga-assisted growth of GaAs NWs. Koivusalo et al [21] added two more steps to the technology described in [20]: crystallization of Ga droplets into GaAs by As2 exposure and spontaneous oxidation of the Si surface by air exposure outside the MBE setup. The above makes it possible to decrease the substrate preparation temperature to a lower level than typical GaAs NWs MBE growth temperature
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