Low-temperature highly preferred polycrystalline Si film growth on crystallized amorphous Si by reactive ion beam deposition

Abstract

Highly preferred polycrystalline Si (polysilicon) film growth on amorphous Si with ion‐assisted crystallization by reactive ion beam deposition (RIBD) at the low temperature of 550 °C was investigated. This method uses low‐energy controlled ionized species produced from electron‐cyclotron‐resonance plasma. To achieve highly preferred polysilicon film growth, a new growth process using ion‐assisted crystallization was developed as follows: After a thin amorphous Si film was deposited on an amorphous substrate at 100–150 °C and 100 eV by RIBD using SiH4, it was crystallized at 550 °C by 400‐eV H+ and H+2 irradiation using the same RIBD system. Then, a polysilicon film was grown at the same temperature and 100 eV by RIBD using SiH4. Polysilicon films grown by this process possess stronger Si(220)‐preferred growth orientation and higher Hall mobility than the films grown directly on amorphous substrates.