Low-Temperature Fabrication of Ir/Pb(Zr,Ti)O3/Ir Capacitors Solely by Metalorganic Chemical Vapor Deposition

Abstract

Ir/Pb(Zr, Ti)O3(PZT)/Ir capacitors were fabricated solely by metalorganic chemical vapor deposition (MOCVD). Both top and bottom Ir electrodes with mirror like surfaces were obtained at 300°C by MOCVD. Ferroelectric PZT thin films were successfully prepared at 395-540°C by MOCVD using (C2H5)3PbOCH2C(CH3)3 as a Pb precursor and PbTiO3 as a seed. Both Ir electrodes and PZT thin films showed good step coverage of 70–80%. PZT films prepared at 445–540°C exhibited well-saturated hysteresis loops with remanent polarization of 19–25 µC/cm2.