Abstract
Resistivity annealing characteristics of tungsten silicide films made by the chemical vapor deposition technique at 0.3 Torr and 275–425 °C has been investigated paying particular attention to their low temperature annealing behavior. The Si-to-W atomic ratio was controlled in the range of 2.1–4.1 by means of a substrate temperature. Resistivity of the annealed sample with the lower atomic ratio is shown to increase initially in the temperature range below about 500 °C. It was concluded that this increase is explained neither by impurity effect nor by compositional change of Si and W as detected by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. X-ray diffraction analysis shows that this phenomenon is rather well correlated with the formation of hexagonal phase of WSi2.
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