Abstract
Low resistance contacts to epitaxial n-CdTe on InSb have been formed by excimer laser induced diffusion of In with subsequent deposition of gold. Diodes have been fabricated using a combination of laser processing and conventional photolithigraphy, and the forward bias and reverse bias current–voltage characteristics measured. All the diodes behaved effectively as Schottky diodes with high ideality factors ( n≈3) and exhibited stable characteristics over several months. Estimates of the In–CdTe barrier height have been made taking into account the effective current dependent series resistance which is known to arise from the rear InSb–CdTe junction. The barriers range from 0.7 eV (no diffusion) to 0.4 eV, the last having a specific contact resistance of 0.16 Ω/cm 2. We show from the characteristics of the rear junction, together with an estimate of the maximum melt-depth, that In has not diffused to the rear InSb–CdTe junction.
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