Abstract
In this paper, we investigate the influence of annealing on the current–voltage characteristics of Al–nGaAs contacts treated with selenious acid (H2SeO3). Low-resistivity ohmic contacts were obtained by furnace annealing of Al–GaAs contacts formed on Se modified GaAs surfaces. A specific resistivity as low as 7.5 × 10−6 Ω cm2 has been achieved with an Al–nGaAs ohmic contact on an n+ GaAs substrate. The formation of the Al–nGaAs ohmic contact is explained by an interface Se reaction with both GaAs and Al.
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