Abstract
Heterosynaptic Plasticity In article number 2104174, Jung-Dae Kwon, Yonghun Kim, Byungjin Cho, and co-workers demonstrate a highly reliable 2D MoS2/Nb2O5 memtransistor device based on Schottky barrier modulation is demonstrated. The 2D/oxide memtransistor attains dual-terminal stimulated heterosynaptic plasticity, showing an extremely low power consumption of ≈6 pJ and reliable endurance characteristics over 2000 pulses. Finally, a high pattern recognition accuracy of ≈94.2% is achieved using a pattern recognition simulation, which promotes advanced neuromorphic systems.
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