Low-pass secondary electron detector for outlens scanning electron microscopy

Abstract

A low-pass secondary electron detector has been invented for outlens scanning electron microscopy. This detector is composed of a bias grid above and an electron detector below the specimen. The upward low-energy electrons emitted from the specimen are reflected downward by the bias grid and reach the secondary electron detector. The high-energy electrons penetrate the grid and are not detected. This detector has an advantage of quantitative analysis because the secondary electron trajectories are easily traced with simple parabolic motion. The energy-filtered images of the GaN/Si sample are obtained using this detector.