Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

Abstract

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm−3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm−3 for which ρc is as low as 2 × 10−5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.