Abstract
Recent use of alloying techniques for rear contact formation has yielded a new kind of Si solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage (Voc) and improved radiation resistance. Several analytical models for Voc based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the LHJ and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondence between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells should be re-examined.
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