Abstract
In this paper we report on both the DC and low frequency noise (LFN) properties of InP/InGaAs heterojunction bipolar phototransistors (HPTs) featuring waveguide type illumination. Both DC and LFN measurements demonstrate the good quality of these devices. In particular, they exhibit a 1/ f noise figure-of-merit of 2·10 −8 μm 2, which is exceptionally very good in the field of the compound semiconductor HBTs, where values around 10 −7 μm 2 are usually reported.
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