Abstract
A variable frequency light pumping (VFLP) effect is presented which describes the energetic induced photon generation mechanism in the stress metal oxide silicon (MOS) system. It is shown that the VFLP occurs, when both the tunneling electrons and the induced photons are coherent. Both the tunneling electrons and the induced photons in the MOS system from the light pumping can gain the energy required to break the Si–O bonds and to excite interstitial oxygen and to lead then to create the intrinsic point defects in the oxide, and the surface silicon, and at the interfaces. Based on the hybrid sixfold ring of the continuous random network model for SiO 2, the intrinsic point defect generation under low field and its basic properties have been studied.
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