Abstract
We report here, the effect of γ-irradiation on low field AC susceptibility as a function of temperature on the grown polycrystalline Bi1.2Pb0.33Sr1.54Ca2.06Cu3O10+δ sample. The sample was irradiated with γ-ray dose of 100 MR and 300 MR. The temperature dependent AC susceptibility measurements have been carried out with varying AC field amplitude H ac (0.5 to 9.0 Oe) at frequency 131.1 Hz on both un-irradiated and irradiated samples. AC susceptibility measurements as a function of temperature at AC field amplitude H ac = 2.0 Oe have also been carried out with varying frequency (31.1 Hz to 1131.1 Hz). The temperature dependence of AC susceptibility with varying amplitude has been analyzed using well defined Bean's critical state model. The critical current density (J c) is calculated as a function of both AC field amplitude (H ac) and temperature. An increase in J c with the increase of γ-dose has been found.
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