Abstract
The low frequency noise (10 Hz-100 kHz) behaviour of InAlAs/InP HFETs fabricated using CH/sub 4//H/sub 2/ selective dry recess etching is reported. Devices from the same epitaxial structure fabricated using wet recess etching are also presented for comparison. The dry etching technique improves the drain noise spectral density. This improvement is attributed to the decrease in the source and drain resistance from 2.4 /spl Omega/ mm for the wet recess, to 1.6 /spl Omega/ mm For the dry recess. The equivalent series resistance fluctuations can explain the noise behaviour in both devices. No significant passivation of traps occurs during the CH/sub 4//H/sub 2/ etching process, as demonstrated by noise measurements on annealed dry etched devices.
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