Low dielectric loss, dielectric response, and conduction behavior in Na-doped Y2/3Cu3Ti4O12 ceramics

Abstract

The Na-doped Y2/3Cu3Ti4O12 system has been prepared and investigated. Na doping facilitates the formation of oxygen vacancies, which is of great benefit to the growth of the grain size. Proper amount of Na substitution in NaxY(2−x)/3Cu3Ti4O12 ceramics makes the dielectric loss significantly decreased. As x = 0.050, Na0.050Y0.650Cu3Ti4O12 ceramics exhibit the lowest dielectric loss (about 0.022 at 1 kHz) and a relatively high dielectric constant (about 7500 at 1 kHz). The lowered dielectric loss is closely associated with the enhanced resistance of grain boundary. The conduction and dielectric processes of grain boundary become much more difficult after Na doping. Impedance analysis suggests that the same charge defects are responsible for the conduction and dielectric relaxation behaviors of grain boundary. Scaling behaviors indicate that the physical nature of their dielectric relaxation and conduction behavior are independent of the measurement temperature and the Na concentration.