Low Density of Near-Interface Traps at the Al<sub>2</sub>O<sub>3</sub>/4H-SiC Interface with Al<sub>2</sub>O<sub>3</sub> Made by Low Temperature Oxidation of Al

Abstract

We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors at different temperatures. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200°C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300°C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient.