Abstract
Normal-incidence p-i-n Ge/Si photodetectors were fabricated on SOI substrate by selective epitaxy. Thermal annealing and surface Si passivation were performed in situ to reduce the dark current. Bulk leakage current density and surface leakage density as low as 3.4 mA/cm2 and 0.4 μA/cm are achieved under –1 V, respectively. The responsivity at wavelength of 1550 and 1310 nm are 0.27 and 0.59 A/W under zero-bias, respectively. The photodetector has a 3-dB bandwidth of 48 GHz at –3 V. Clear open eye diagrams at 40 Gbps are observed under zero-bias at a wavelength of 1550 nm.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
