Abstract
A novel method for fabricating high efficiency metal Schottky barrier solar cells is reported. The method is based on the fabrication of or thin films chemically deposited with and without silicotungstic acid (STA). The performances of the Schottky junctions fabricated with the films deposited with STA,, or , are significantly higher than those deposited without STA. Under AM1 illumination, the photovoltaic properties of the improved diode showed , , , and efficiency . Analogous results are obtained on , where the photovoltaic response of the improved diode showed , , , and . The ideality factor and saturation current density were also significantly improved. C‐V measurements at 1 MHz showed that the barrier height of the fabricated diodes are 0.62 and 0.59 eV for and junctions, respectively, and 0.81 and 0.80 eV for and junctions, respectively. It is also observed that the values are independent of the metal work functions. This is attributed to the Fermi level pinning of or films deposited with and without STA.
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