Abstract
A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.
Highlights
The fabrication of homo- and hetero-junction diodes based on nanomaterials is an emerging field that could allow for practical application of nanotechnology in electronics
Much work has been demonstrated for heterojunctions based on n- and p-type ZnO nanoparticles using physical techniques [1,2,3,4,5,6,7,8] but the results were not satisfactory overall with respect to the rectification ratio and cut-in voltage [6,7,8]
This research reports a strategy for fabrication of low cost, highly rectifying (p-ZnO/n-Si) nano heterojunction diode using solution-processed p-type ZnO (p-ZnO) nanoparticles
Summary
The fabrication of homo- and hetero-junction diodes based on nanomaterials is an emerging field that could allow for practical application of nanotechnology in electronics. Much work has been demonstrated for heterojunctions based on n- and p-type ZnO nanoparticles using physical techniques [1,2,3,4,5,6,7,8] but the results were not satisfactory overall with respect to the rectification ratio and cut-in voltage [6,7,8]. This research reports a strategy for fabrication of low cost, highly rectifying (p-ZnO/n-Si) nano heterojunction diode using solution-processed p-ZnO nanoparticles.
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