Abstract
Resistive random-access memory (ReRAM) is regarded as one of the most promising alternative nonvolatile memory technologies for its advantages in very-high-storage density, simple structure, low power consumption, and long endurance, as well as good compatibility with traditional complimentary metal-oxide-semiconductor (CMOS) technology. In addition to the data storage, ReRAM can also be used for logic operation and computation, demonstrating a great potential in developing a non-von Neumann computing system. Extensive studies on ReRAM technology, including material, device process, cell and array structure, circuit, and architecture, have been conducted in recent years. In this article, we provide a broad perspective on ReRAM technology for future storage and computing. The models, challenges, and applications are also summarized.
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