Abstract
Long-wavelength infrared InAs/GaSb type-II superlattice PπBN photodetectors are demonstrated on GaSb substrates. The focal plane array device consists of a 2.0μm thick absorber layer and has a 50% cutoff wavelength of 11.3μm, and a maximum resistance-area product of 800 Ω•cm2 at 77 K. And the resistance-area product stay above 500 Ω•cm2 at the range from -200 mV to -1100 mV. These single units show good consistency. It has laid a reliable foundation for the manufacturing of focal plane arrays.
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