Long-life GaAs-GaAlAs TJS laser with low threshold current and fundamental transverse and single longitudinal mode

Abstract

We review progress in novel semiconductor lasers positioned to enable planar optoelectronic integration and to facilitate the realization of functional photonic devices. Lateral injection of current into the active region of a semiconductor laser has been pursued, mostly empirically, since the early 1970s. In this work, we focus on recent advances in the development of a device model which accounts for the qualitative structural and operational differences between lateral and conventional vertical injection lasers. We review fabrication methods — both established and emerging — suitable for LCI laser realization. Finally, we report the results of recent combined theoretical–experimental explorations of laser performance.