Abstract
We have investigated in the bands structure and the effective mass, respectively, along the growth axis and in the plane of InAs (d1=48.5Å)/GaSb(d2=21.5Å) type II superlattice (SL), performed in the envelop function formalism. We studied the semiconductor to semimetal transition and the evolutions of the optical band gap, Eg(Γ), as a function of d1, the valence band offset Λ and the temperature. In the range of 4.2–300 K, the corresponding cutoff wavelength ranging from 7.9 to 12.6 µm, which demonstrates that this sample can be used as a long wavelength infrared detector. The position of the Fermi level, EF = 512 meV, and the computed density of state indicates that this sample is a quasi-two-dimensional system and exhibits n type conductivity. Further, we calculated the transport scattering time and the velocity of electrons on the Fermi surface. These results were compared and discussed with the available data in the literature.
Highlights
The atmosphere absorbs weakly in the near and the long wave infrared (LWIR) wavelength range, which offer a high potential for long-range observation sensors
We have focused on the investigation of the electronic bands structure properties, energy subbands and carrier’s effective mass in the growth direction and in-plan of InAs(d1=48.5)/GaSb(d2=21.5Å), based on the envelope function formalism of k.p theory and the effective mass approximation [12]
We have performed a theoretical calculation based on the envelope function formalism in order to investigate the optoelectronic proprieties of InAs(d1=48.5Å)/GaSb(d2=21.5Å) superlattice
Summary
The atmosphere absorbs weakly in the near and the long wave infrared (LWIR) wavelength range, which offer a high potential for long-range observation sensors. The dark current density is an important indicator for measuring the performance of infrared detectors This indicator can be reduced by proper the band engineering. The fundamental band gap of InAs/GaSb superlattice can be designed with varying the thickness of the constituent’s layers for strong broad band absorption. The study of such semiconductor heterostructues properties requires the investigation of bands structure that describes all the subband behavior [10]. In addition to the density of state and Fermi level energy calculations
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