Abstract
Native oxidation (‘‘wet’’ oxidation via H2O vapor+N2) of InAlAs is employed to fabricate long wavelength (λ∼1.5 μm) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes. Data are presented on gain-guided native-oxide-defined stripe-geometry lasers (40 μm×500 μm) with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at λ∼1.5 μm. The threshold currents, approximated as Ith=I0 exp(T/T0), exhibit a characteristic temperature of T0∼49 K and an operating temperature as high as T=70 °C. Maximum continuous output powers of 140 mW/facet (uncoated facets) and a differential quantum efficiency of 38% are achieved.
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