Abstract
The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy and selected area electron diffraction are used to identify amorphous In-Ox-Ny oxynitride phase. When the oxidized area exceeds the critical size of 5 nm, the amorphous In-Ox-Ny phase eventually undergoes phase transition via a slow chemical reaction of atomic oxygen with the indium atoms, forming a single bcc In2O3 phase.
Highlights
Recent investigations reveal that oxygen contamination plays the most prominent, though not the only role for optimum semiconducting and optical properties of influenced by the lattice mismatch (InN) films [1,2,3]
This argument was further supported by the fact that immediate oxidization of InN films was observed at temperatures higher than 600 K but not at room temperature [6]
The formation of InN droplets by metalorganic vapor phase epitaxy or metalorganic chemical vapor deposition was due to indium surface segregation when the ammonia concentration was insufficient [26,27]
Summary
Recent investigations reveal that oxygen contamination plays the most prominent, though not the only role for optimum semiconducting and optical properties of InN films [1,2,3]. It was suggested that oxygen accelerates the formation of an intermediate amorphous indium oxynitride phase inside the InN matrix, which eventually oxidizes InN completely to form In2O3 [5]. This argument was further supported by the fact that immediate oxidization of InN films was observed at temperatures higher than 600 K but not at room temperature [6]
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