Abstract
Electron spin resonance was used to study directly the influence of external factors on a system of defects in gallium phosphide crystals doped nonuniformly with iron. The Fes3+ (Ga) ions replacing Ga atoms (the A centers) and Fei0 interstitial atoms (the B centers) are considered as indicators and participants in rearrangement of the crystal’s defect system. Long-range effects of ion irradiation with argon, chemical etching, or mechanical grinding on the A and B centers are observed. The long-range effect is explained by plastic deformation of the GaP:Fe crystal and by interaction of dislocations with A and B centers when the crystal is modified by ion irradiation or by removal of a layer that is saturated with Fes3+ (Ga) centers and gives rise to stresses from one of the sample surfaces. In the case of ion irradiation, the role of elastic waves that are generated in the stopping zone of argon ions and that interact with B centers and dislocations is apparently important.
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