Abstract
We numerically study the response time of an ultrafast microwave switch, i.e., a GaAs-based Gunn device, under stochastic stimuli. The conducting states in this semiconductor device can be controlled in the presence of laser illumination near the doping notch. With the consideration of the additional randomness in laser intensity, the switching time from the initial unstable state to the final stable state will increase. Therefore, the so-called noise delayed decay of unstable states in an n+-n-n+ semiconductor device is demonstrated.
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