Abstract
We demonstrate the occurrence of localized surface plasmon resonances (LSPRs) in periodic arrays of highly doped/un-doped InAsSb/GaSb semiconductor nanostructures, where highly doped InAsSb is degenerated and exhibits a metallic behavior while being lattice-matched onto GaSb. Reflectance spectroscopy allows investigating the impact of the geometrical and physical properties of both InAsSb and GaSb materials on the LSPR. Our results show that these InAsSb/GaSb nanostructures form the building blocks of metal-free, all-semiconductor infrared plasmonic devices.
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