Abstract
The localization of voids in thin Si1−xGex layers after He+ implantation and thermal annealing is reported. A Si/Si1−xGex multilayer grown onto (001) Si was implanted with He+ in the 10−30 keV range, with fluences from 7×1015 up to 1×1016 cm−2, and annealed at 800 °C for 1 h. Samples were analyzed by transmission electron microscopy, showing void formation only within the two layers containing Ge or at the film/substrate interface. Our results support the idea that the compressive strain in the Si1−xGex layers induces the nucleation of small cavities and the growth of voids by a mechanism where vacancies are stabilized by He.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
