Abstract
Resistive heating of microline resistors was used to activate vapor-deposition synthesis of silicon nanowires and carbon nanotubes in a room-temperature chamber. The process is compatible with on-chip microelectronics and eliminates the necessity of postsynthesis assembly of nanostructures to form more complicated devices. The process is localized, selective, and scalable. The synthesized nanowire dimensions are 30–80 nm in diameter and up to 10 μm in length, while nanotubes 10–50 nm in diameter and up to 5 μm in length have been demonstrated. Growth rates of up to 1 μm/min for silicon nanowires and up to 0.25 μm/min for carbon nanotubes were observed. This method facilitates the integration of nanotechnology with larger-scale systems.
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