Abstract
The impact of local lifetime control by 1H+ and 4He2+ irradiation on blocking characteristics of power P–i–N diodes was studied in the dose range up to 5×1012cm−2. Energies and doses for both types of projectiles were chosen in a way to create a comparable damage in three qualitatively different regions close to the anode junction. Blocking capabilities of irradiated diodes were measured, compared and simulated. The results show that there is no difference between hydrogen and helium irradiation if the damage is located inside the anode area. When the damage peak is placed into the N-base side of the anode junction and the dose of protons exceeds 1012cm−2, blocking capability of the diode drastically decreases while it stays at the same level for analogous irradiation by helium ions.
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