Abstract
We report the local homoepitaxial growth of NiO thin films with simultaneously tunable crystallization, preferred growth orientation, and electrical properties by reactive sputtering. Using a seed layer with fiber texture previously deposited on glass and silicon substrates, the room temperature growth of highly ‐oriented NiO thin films with good crystallization has been achieved. Microstructure analyses evidence that the columns of the top layer are homoepitaxially grown on the columns of seed one. The resistivity of ‐oriented homoepitaxial layer is lower than the seed one and higher than that of single layer of multiple orientations deposited with the same condition.
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