Abstract
We investigate the morphological evolution of islands obtained by epitaxial growth of Ge on Si(001) substrates. We are able to obtain highly uniform distributions of SiGe islands, which exhibit a ``barn'' shape. In addition to previously observed facets, we identify higher index facets, which are not observed in dome-shaped islands. The evolution of the island-related facet area provides evidence of a transition from domes to steeper barns, which continues the sequence of coherent island types before the onset of plastic relaxation. For higher Ge coverages, when plastically relaxed islands (superdomes) form, the island ensemble loses its homogeneity. This is essentially the result of anomalous coarsening, with material being transferred from coherent islands to larger superdomes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
