Abstract
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.
Highlights
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K
The charge neutrality point of the poly methyl methacrylate (PMMA)-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region
A single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region
Summary
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. We present a simple method to demonstrate local doping on single-layer graphene by means of selective H2 exposure.
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