Abstract
Publisher Summary This chapter discusses a low-light level (LLL) imaging detector consisting of a third-generation image intensifier, which is optically coupled to a solid-state charge-coupled device (CCD) array. This device combines the advantages of both components—the high sensitivity and low-dark current—of the GaAs photocathode and the small dimensions, the solidity, the reliability, and the electrical performance of solid-state CCD arrays used as TV-imaging analyzers. GaAs photocathodes are very well suited for imaging with low-level natural illumination because of their high and constant quantum efficiency in the 0.6- to 0.9-μm spectral range. The use of direct CCD imaging at LLLs is severely limited by the important thermal-noise fluctuations that occur in silicon at ambient temperatures. Hence, a high-performance quantum noise limited LLL-imaging device is realized by coupling a GaAs photocathode with a CCD matrix, provided that an intermediate electron gain of about 104 is obtained.
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