Abstract
SiC epitaxial growth was carried out on 6H-SiC Acheson seed crystals in liquid phase using a closed carbon crucible. The growth was carried out in the temperature range of 1500–1700°C. The geometrical configurations of seed crystals inside the crucible were specific, such that epitaxial layer growth occurred simultaneously on both faces of the same seed crystal under the same growth conditions. Growth rates as high as 20–30 μm/h have been achieved. The growth rate and surface morphologies observed after the growth indicated that the temperature gradient on the seed crystal faces plays a dominant role for the growth mechanism of the epitaxial layers. The convection within the solvent caused by the temperature gradient enhances the mass transport to the growing layer faces enhancing the growth rate and also results in a better surface morphology of the epitaxial grown layers.
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