Abstract
Yb-doped InP was grown by liquid phase epitaxy (LPE). Results of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements revealed that Yb ions are not uniformly dispersed in the crystals but rather incorporated in the crystals as micro particles of Yb-rich compounds. It results in low reproducibility of the epitaxially grown crystals, and relatively weak Yb-related luminescence in spite of the high average Yb concentration in the crystals. Preliminary experimental results on Er-doped InP and InGaAsP also revealed formation of Er-rich micro particles within the epitaxial crystals. This seems to be the reasons for reported difficulties in fabricating high quality, reproducible, Er-doped InP/InGaAsP doubleheterostructure lasers by LPE.
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