Abstract
AbstractThis study investigates the growth of silicon oxide film on gallium nitride using hydrosilicofluoric acid and silica gel by the temperature‐difference liquid‐phase deposition. In the conventional liquid phase deposition, the boric acid is used as fluorine scavenger to prompt silicon oxide deposition and it also acts as an impurity in the oxide film. The better metal–oxide–semiconductor diode electrical characteristics can be obtained by the temperature‐difference method with lower boric acid incorporation and higher deposition rate. Compared with the leakage current density of the conventional and temperature‐difference methods, it can be much improved from 9.93 × 10–2 A/cm2 to 5.8 × 10–4 A/cm2 at +2 MV/cm and from 1.35 × 10–2 A/cm2 to 5.15 × 10–4 A/cm2 at –1 MV/cm. The effective oxide charges is improved from 3.88 × 1011 cm–2 to 2.27 × 1011 cm–2. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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